ntjs3157n trench power mosfet 20 v, 4.0 a, single n ? channel, sc ? 88 features ? leading trench technology for low r ds(on) extending battery life ? fast switching for increased circuit efficiency ? sc ? 88 small outline (2 x 2 mm) for maximum circuit board utilization, same as sc ? 70 ? 6 ? pb ? free packages are available applications ? dc ? dc conversion ? low side load switch ? cell phones, computing, digital cameras, mp3s and pdas maximum ratings (t j = 25 c unless otherwise stated) parameter symbol value unit drain ? to ? source voltage v dss 20 v gate ? to ? source voltage v gs 8.0 v continuous drain current (note 1) steady state t a = 25 c i d 3.2 a t a = 85 c 2.3 t 5 s t a = 25 c 4.0 power dissipation (note 1) steady state t a = 25 c p d 1.0 w pulsed drain current t p = 10 s i dm 10 a operating junction and storage temperature t j , t stg ? 55 to 150 c source current (body diode) i s 1.6 a lead temperature for soldering purposes (1/8? from case for 10 s) t l 260 c thermal resistance ratings (note 1) parameter symbol max unit junction ? to ? ambient ? steady state r ja 125 c/w junction ? to ? ambient ? t 5 s r ja 80 junction ? to ? lead ? steady state r jl 45 maximum ratings are those values beyond which device damage can occur. maximum ratings applied to the device are individual stress limit values (not normal operating conditions) and are not valid simultaneously. if these limits are exceeded, device functional operation is not implied, damage may occur and reliability may be affected. 1. surface mounted on fr4 board using 1 in sq pad size (cu area = 1.127 in sq [1 oz] including traces). sot ? 363 case 419b style 28 marking diagram & pin assignment t92 m 1 6 1 t92 = device code m = date code = pb ? free package dds ddg (note: microdot may be in either location) v (br)dss r ds(on) typ i d max 45 m @ 4.5 v 55 m @ 2.5 v 70 m @ 1.8 v 4.0 a 20 v top view sc ? 88 (sot ? 363) d d s d d 6 5 4 1 2 3 g smd type smd type smd type smd type smd type smd type smd type smd type smd type smd type product specification 4008-318-123 sales@twtysemi.com http://www.twtysemi.com 1 of 2
electrical characteristics (t j = 25 c unless otherwise stated) parameter symbol test condition min typ max unit off characteristics drain ? to ? source breakdown voltage v (br)dss v gs = 0 v, i d = 250 a 20 v drain ? to ? source breakdown voltage temperature coefficient v (br)dss /t j v gs = 0 v, i d = 250 a 12 mv/ c zero gate voltage drain current i dss v gs = 0 v, v ds = 16 v t j = 25 c 1.0 a t j = 85 c 5.0 gate ? to ? source leakage current i gss v ds = 0 v, v gs = 8.0 v 100 na on characteristics (note 2) gate threshold voltage v gs(th) v gs = v ds , i d = 250 a 0.40 v negative threshold temperature coefficient v gs(th) /t j ? 4.0 mv/ c drain ? to ? source on resistance r ds(on) v gs = 4.5 v, i d = 4.0 a 45 60 m v gs = 2.5 v, i d = 3.6 a 55 70 v gs = 1.8 v, i d = 2.0 a 70 85 forward transconductance g fs v gs = 10 v, i d = 3.2 a 9.0 s charges and capacitances input capacitance c iss v gs = 0 v, f = 1.0 mhz, v ds = 10 v 500 pf output capacitance c oss 75 reverse transfer capacitance c rss 60 total gate charge q g(tot) v gs = 4.5 v, v ds = 10 v, i d = 3.2 a 6.9 15 nc gate ? to ? source charge q gs 1.0 gate ? to ? drain charge q gd 1.8 switching characteristics (note 3) turn ? on delay time t d(on) v gs = 4.5 v, v dd = 10 v, i d = 0.5 a, r g = 6.0 6.0 15 ns rise time t r 12 25 turn ? off delay time t d(off) 21 45 fall time t f 11 25 drain ? source diode characteristics forward diode voltage v sd v gs =0 v, i s = 1.6 a t j = 25 c 0.7 1.0 v reverse recovery time t rr v gs = 0 v, di s /dt = 100 a/ s, i s = 1.6 a 15 ns charge time t a 12 discharge time t b 3.0 reverse recovery charge q rr 5.0 nc 2. pulse test: pulse width 300 s, duty cycle 2%. 3. switching characteristics are independent of operating junction temperatures. ntjs3157n smd type smd type smd type smd type smd type smd type smd type smd type smd type smd type product specification 4008-318-123 sales@twtysemi.com http://www.twtysemi.com 2 of 2
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